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Forventes på lager: 29-09-2021
This book characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. It explains different types of device architectures available to enhance the performance including InAs based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs based SG and DG-HEMT is also discussed.
| Forlag | Taylor & Francis Ltd |
| Forfatter | N. (GITAM University Mohankumar |
| Type | Bog |
| Format | Hardback |
| Sprog | Engelsk |
| Udgivelsesdato | 29-09-2021 |
| Første udgivelsesår | 2021 |
| Illustrationer | 7 Tables, black and white; 78 Line drawings, black and white; 1 Halftones, black and white; 79 Illustrations, black and white |
| Fagredaktør | N. (GITAM University Mohankumar |
| Originalsprog | United Kingdom |
| Sideantal | 130 |
| Indbinding | Hardback |
| Forlag | Taylor & Francis Ltd |
| Sideoplysninger | 130 pages, 7 Tables, black and white; 78 Line drawings, black and white; 1 Halftones, black and whit |
| Mål | 213 x 379 x 15 |
| ISBN-13 / EAN-13 | 9780367554149 |