Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications

(Bog, Paperback / softback, Engelsk)

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Beskrivelse

This book characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. It explains different types of device architectures available to enhance the performance including InAs based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs based SG and DG-HEMT is also discussed.

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Alle detaljer

Forlag Taylor & Francis Ltd
Type Bog
Format Paperback / softback
Sprog Engelsk
Udgivelsesdato 25-09-2023
Første udgivelsesår 2023
Illustrationer 7 Tables, black and white; 78 Line drawings, black and white; 1 Halftones, black and white; 79 Illustrations, black and white
Fagredaktør N. (GITAM University Mohankumar
Originalsprog United Kingdom
Sideantal 130
Indbinding Paperback / softback
Forlag Taylor & Francis Ltd
Sideoplysninger 130 pages, 7 Tables, black and white; 78 Line drawings, black and white; 1 Halftones, black and whit
Mål 234 x 156
ISBN-13 / EAN-13 9780367554156