Bemærk: Kan ikke leveres før jul.
Forventes på lager: 10-01-2021
In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation.
| Forlag | Springer Verlag, Singapore |
| Type | Bog |
| Format | Hardback |
| Sprog | Engelsk |
| Udgave | 1st ed. 2021 |
| Udgivelsesdato | 10-01-2021 |
| Første udgivelsesår | 2021 |
| Illustrationer | 231 Illustrations, color; 23 Illustrations, black and white; VIII, 438 p. 254 illus., 231 illus. in color. |
| Fagredaktør | Wen Siang Lew, Gerard Joseph Lim, Putu Andhita Dananjaya |
| Originalsprog | Singapore |
| Sideantal | 438 |
| Indbinding | Hardback |
| Forlag | Springer Verlag, Singapore |
| Sideoplysninger | 438 pages, 231 Illustrations, color; 23 Illustrations, black and white; VIII, 438 p. 254 illus., 231 |
| Mål | 235 x 155 |
| ISBN-13 / EAN-13 | 9789811569104 |