1. Forside
  2. Bøger
  3. Engelske bøger
  4. Materialelære
  5. Fundamentals of Silicon Carbide Technology: Growth,...

Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications

(Bog, Hardback, Engelsk)
Forfattere: Tsunenobu (Kyoto University Kimoto, James A. (Purdue University Cooper
Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications
Forlag: John Wiley & Sons Inc

Når du handler på WilliamDam.dk, betaler du den pris du ser.

  • Ingen gebyrer
  • Ingen abonnementer
  • Ingen bindingsperioder

Relaterede kategorier

Materialelære
  = Emner / kategorier
  = Sektioner / guides
  = Specialsider
  = Kampagner

Beskrivelse

A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001.

Læsernes anmeldelser (0)

Alle detaljer

Forlag John Wiley & Sons Inc
Forfattere Tsunenobu (Kyoto University Kimoto, James A. (Purdue University Cooper
Type Bog
Format Hardback
Sprog Engelsk
Udgivelsesdato 21-11-2014
Første udgivelsesår 2014
Serie IEEE Press
Originalsprog United States
Sideantal 400
Indbinding Hardback
Forlag John Wiley & Sons Inc
Sideoplysninger 400 pages
Mål 179 x 251 x 32
ISBN-13 / EAN-13 9781118313527