Forventes på lager: 21-05-2019
The book covers III-V high electron mobility transistors (HEMT) and their basic physics, materials, fabrication, reliability, modeling and simulation with detailed DC, RF and breakdown performances of high electron mobility transistors, with reference to AlGaN/GaN HEMTs, MoS HEMT, InP HEMTs and DG-HEMTs.
| Forlag | Taylor & Francis Ltd |
| Type | Bog |
| Format | Hardback |
| Sprog | Engelsk |
| Udgivelsesdato | 21-05-2019 |
| Første udgivelsesår | 2019 |
| Illustrationer | 13 Tables, black and white; 319 Illustrations, black and white |
| Fagredaktør | D. Nirmal, J. Ajayan |
| Originalsprog | United Kingdom |
| Sideantal | 442 |
| Indbinding | Hardback |
| Forlag | Taylor & Francis Ltd |
| Sideoplysninger | 442 pages, 13 Tables, black and white; 319 Illustrations, black and white |
| Mål | 187 x 262 x 25 |
| ISBN-13 / EAN-13 | 9781138625273 |