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Forventes på lager: 13-12-2007
Highlights silicon-based heterostructure devices and divides them into four sections: SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, other heterostructure devices, and optoelectronic components. This book covers topics including device physics, broadband noise, performance limits, reliability, and engineered substrates.
| Forlag | Taylor & Francis Inc |
| Forfatter | John D. (Georgia Institute of Technology) Cressler |
| Type | Bog |
| Format | Hardback |
| Sprog | Engelsk |
| Udgivelsesdato | 13-12-2007 |
| Første udgivelsesår | 2007 |
| Illustrationer | 8 Tables, black and white; 32 Halftones, black and white; 302 Illustrations, black and white |
| Originalsprog | United States |
| Sideantal | 466 |
| Indbinding | Hardback |
| Forlag | Taylor & Francis Inc |
| Sideoplysninger | 466 pages, 8 Tables, black and white; 32 Halftones, black and white; 302 Illustrations, black and wh |
| Mål | 254 x 178 |
| ISBN-13 / EAN-13 | 9781420066906 |