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Forventes på lager: 23-08-2016
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. A rigorous overview of transport modeling in strained devices is given.
| Forlag | Springer Verlag GmbH |
| Forfatter | Viktor Sverdlov |
| Type | Bog |
| Format | Paperback / softback |
| Sprog | Engelsk |
| Udgave | Softcover reprint of the original 1st ed. 2011 |
| Udgivelsesdato | 23-08-2016 |
| Første udgivelsesår | 2016 |
| Serie | Computational Microelectronics |
| Illustrationer | XIV, 252 p. |
| Originalsprog | Austria |
| Sideantal | 252 |
| Indbinding | Paperback / softback |
| Forlag | Springer Verlag GmbH |
| Sideoplysninger | 252 pages, XIV, 252 p. |
| Mål | 240 x 168 |
| ISBN-13 / EAN-13 | 9783709119334 |