Forventes på lager: 03-10-2016
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs).
| Forlag | Taylor & Francis Inc |
| Forfattere | Yue (Xidian University Hao, Jin Feng (Xidian University Zhang, Jin Cheng (Xidian University Zhang |
| Type | Bog |
| Format | Hardback |
| Sprog | Engelsk |
| Udgivelsesdato | 03-10-2016 |
| Første udgivelsesår | 2016 |
| Illustrationer | 30 Tables, black and white; 469 Illustrations, black and white |
| Originalsprog | United States |
| Sideantal | 392 |
| Indbinding | Hardback |
| Forlag | Taylor & Francis Inc |
| Sideoplysninger | 392 pages, 30 Tables, black and white; 469 Illustrations, black and white |
| Mål | 184 x 262 x 22 |
| ISBN-13 / EAN-13 | 9781498745123 |