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Forventes på lager: 27-03-2025
Parameters that determine the performance of silicon-based Field Effect Transistors (FET) devices in the presence of degenerate doping, often are not modeled properly and so require precise analysis to improve modeling accuracy.
| Forlag | Springer International Publishing AG |
| Forfatter | Nabil Shovon Ashraf |
| Type | Bog |
| Format | Hardback |
| Sprog | Engelsk |
| Udgivelsesdato | 27-03-2025 |
| Første udgivelsesår | 2025 |
| Serie | Synthesis Lectures on Emerging Engineering Technologies |
| Illustrationer | 59 Illustrations, color; 2 Illustrations, black and white |
| Originalsprog | Switzerland |
| Sideantal | 129 |
| Indbinding | Hardback |
| Forlag | Springer International Publishing AG |
| Sideoplysninger | 129 pages, 59 Illustrations, color; 2 Illustrations, black and white |
| Mål | 240 x 168 |
| ISBN-13 / EAN-13 | 9783031842856 |