Bemærk: Kan ikke leveres før jul.
Forventes på lager: 06-06-2017
This book focusses on the spacer engineering aspects of novel MOS-based device–circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.
| Forlag | Taylor & Francis Inc |
| Forfattere | Sudeb (Indian Institute of Technology Dasgupta, Brajesh Kumar (Indian Institute of Technology-Roorkee Kaushik, Pankaj Kumar (Indian Institute of Technology-Roorkee Pal |
| Type | Bog |
| Format | Hardback |
| Sprog | Engelsk |
| Udgivelsesdato | 06-06-2017 |
| Første udgivelsesår | 2017 |
| Illustrationer | 3 Tables, black and white; 14 Halftones, black and white; 39 Illustrations, color; 49 Illustrations, black and white |
| Originalsprog | United States |
| Sideantal | 154 |
| Indbinding | Hardback |
| Forlag | Taylor & Francis Inc |
| Sideoplysninger | 154 pages, 3 Tables, black and white; 14 Halftones, black and white; 39 Illustrations, color; 49 Ill |
| Mål | 161 x 241 x 16 |
| ISBN-13 / EAN-13 | 9781498783590 |