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Forventes på lager: 30-06-2020
This book focusses on the spacer engineering aspects of novel MOS-based device–circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.
| Forlag | Taylor & Francis Ltd |
| Forfattere | Sudeb (Indian Institute of Technology Dasgupta, Brajesh Kumar (Indian Institute of Technology-Roorkee Kaushik, Pankaj Kumar (Indian Institute of Technology-Roorkee Pal |
| Type | Bog |
| Format | Paperback / softback |
| Sprog | Engelsk |
| Udgivelsesdato | 30-06-2020 |
| Første udgivelsesår | 2020 |
| Originalsprog | United Kingdom |
| Sideantal | 138 |
| Indbinding | Paperback / softback |
| Forlag | Taylor & Francis Ltd |
| Sideoplysninger | 138 pages |
| Mål | 234 x 156 |
| ISBN-13 / EAN-13 | 9780367573553 |